Docs
Contents
- User Guide
-
P11 - P16
- Mechanisms of proton irradiation-induced defects on the electrical performance of 4H-SiC PIN detectors
- A simulation-based design of the CEPC fast luminosity monitor detector using 4H-SiC
- Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC p-i-n Detector
- Radiation Tolerance of Epitaxial 4H-SiC LGAD Under 80-MeV Proton Irradiation
- Simulation of radiation damage effect on silicon detectors using RASER
- Irradiation study using QA test pieces of ATLAS18 ITk strip sensors with 80 MeV protons
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P1 - P10
- Temperature-dependent performance characterization of 4H-SiC PIN detectors for alpha-particle detection (25–90 °C)
- Electrical Properties and Gain Performance of 4H-SiC LGAD (SICAR)
- Feasibility study of CSNS as an ATLAS ITk sensor QA irradiation site
- High-precision CSNS beam monitor system conceptual design based on SiC
- Design and simulation of 4H-SiC low gain avalanche diode
- Design and simulation of a novel 4H-SiC LGAD timing device
- Electric field measurement by edge transient current technique on silicon low gain avalanche detector
- Leakage Current Simulations of Low Gain Avalanche Diode with Improved Radiation Damage Modeling
- Timing Performance Simulation for 3D 4H-SiC Detector
- Time Resolution of the 4H-SiC PIN Detector