Sen Zhao (赵森)

Contact

• Email: zhaosen[AT]ihep.ac.cn
• Phone: +86 16680801004
• Office: IHEP Main building A404, 19B Yuquan Road Shijingshan District, Beijing 100049

Research

• [Materials] Defects in SiC: Characterization of defects in materials irradiated by protons, development of corresponding defect models, and description of electrical properties of devices after irradiation.
• [Software] The Development of DEVSIM in RASER : Developed a 2D solver to implement finite element analysis for electrical property applications successfully.
• [Detector] SiC AC&DC-LGAD :The electrical performance of the SiC LGAD, such as current-voltage curve, capacitance-voltage curve, CCE and time resolution.

Education and Work Experience

• BS., Hunan Normal University, 2020-2024.
• RA., Institute of High Energy Physics, CAS (IHEP), 2024 - now.

Hobbies

• Tennis
• Photography

Publications

• Sen Zhao, et al., Electrical Properties and Gain Performance of 4H-SiC LGAD (SICAR), IEEE Transactions on Nuclear Science, vol. 71, no. 11, pp. 2417-2421